We demonstrate a molybdenum silicide superconducting nanowire single-photon detector heterogeneously integrated onto a thin-film lithium niobate waveguide. The detector achieves approximately 50% on-chip detection efficiency at 1550 nm with a jitter of 82 ps when measured at 0.78 K. This demonstration showcases the integration of an amorphous superconductor utilizing conventional fabrication processes without strict cooling and substrate requirements. This paves the way for the integration of additional superconducting electronic components, potentially realizing the full promise of integrated quantum photonic circuits.

Distributing quantum information between remote systems will necessitate the integration of emerging quantum components with existing communication infrastructure. This requires understanding the channel-induced degradations of the transmitted quantum signals, beyond the typical characterization methods for classical communication systems. Here we report on a comprehensive characterization of a Boston-Area Quantum Network (BARQNET) telecom fiber testbed, measuring the time-of-flight, polarization, and phase noise imparted on transmitted signals. We further design and demonstrate a compensation system that is both resilient to these noise sources and compatible with integration of emerging quantum memory components on the deployed link. These results have utility for future work on the BARQNET as well as other quantum network testbeds in development, enabling near-term quantum networking demonstrations and informing what areas of technology development will be most impactful in advancing future system capabilities.

Practical quantum networks require interfacing quantum memories with existing channels and systems that operate in the telecom band. Here we demonstrate low-noise, bidirectional quantum frequency conversion that enables a solid-state quantum memory to directly interface with telecom-band systems. In particular, we demonstrate conversion of visible-band single photons emitted from a silicon-vacancy (SiV) center in diamond to the telecom O-band, maintaining low noise (g2(0)<0.1) and high indistinguishability (V=89±8%). We further demonstrate the utility of this system for quantum networking by converting telecom-band time-bin pulses, sent across a lossy and noisy 50 km deployed fiber link, to the visible band and mapping their quantum states onto a diamond quantum memory with fidelity =87±2.5%. These results demonstrate the viability of SiV quantum memories integrated with telecom-band systems for scalable quantum networking applications.

Color centers have emerged as a leading qubit candidate for realizing hybrid spin-photon quantum information technology. One major limitation of the platform, however, is that the characteristics of individual color-centers are often strain dependent. As an illustrative case, the silicon-vacancy center in diamond typically requires millikelvin temperatures in order to achieve long coherence properties, but strained silicon vacancy centers have been shown to operate at temperatures beyond 1K without phonon-mediated decoherence. In this work we combine high-stress silicon nitride thin films with diamond nanostructures in order to reproducibly create statically strained silicon-vacancy color centers (mean ground state splitting of 608 GHz) with strain magnitudes of ∼4×10−4. Based on modeling, this strain should be sufficient to allow for operation of a majority silicon-vacancy centers within the measured sample at elevated temperatures (1.5K) without any degradation of their spin properties. This method offers a scalable approach to fabricate high-temperature operation quantum memories. Beyond silicon-vacancy centers, this method is sufficiently general that it can be easily extended to other platforms as well.

We propose a new approach to supercontinuum generation and carrier-envelope-offset detection based on saturated second-order nonlinear interactions in dispersion-engineered nanowaveguides. The technique developed here broadens the interacting harmonics by forming stable bifurcations of the pulse envelopes due to an interplay between phase-mismatch and pump depletion. We first present an intuitive heuristic model for spectral broadening by second-harmonic generation of femtosecond pulses and show that this model agrees well with experiments. Then, having established strong agreement between theory and experiment, we develop scaling laws that determine the energy required to generate an octave of bandwidth as a function of input pulse duration, device length, and input pulse chirp. These scaling laws suggest that future realization based on this approach could enable supercontinuum generation with orders of magnitude less energy than current state-of-the-art devices.

Robust, low-loss photonic packaging of on-chip nanophotonic circuits is a key enabling technology for the deployment of integrated photonics in a variety of classical and quantum technologies including optical communications and quantum communications, sensing, and transduction. To date, no process has been established that enables permanent, broadband, and cryogenically compatible coupling with sub-dB losses from optical fibers to nanophotonic circuits. Here, we report a technique for reproducibly generating a permanently packaged interface between a tapered optical fiber and nanophotonic devices on diamond with a record-low coupling loss <1 dB per facet at near-infrared wavelengths (∼730 nm) that remains stable from 300 K to 30 mK. We further demonstrate the compatibility of this technique with etched lithium niobate on insulator waveguides. The technique lifts performance limitations imposed by scattering as light transfers between photonic devices and optical fibers, paving the way for scalable integration of photonic technologies at both room and cryogenic temperatures.

Optical isolator is an indispensable component of almost any optical system and is used to protect a laser from unwanted reflections for phase-stable coherent operation. The development of chip-scale optical systems, powered by semiconductor lasers integrated on the same chip, has resulted in a need for a fully integrated optical isolator. However, conventional approaches based on application of magneto-optic materials to break the reciprocity and provide required isolation have significant challenges in terms of material processing and insertion loss. As a result, many magnetic-free approaches have been explored, including acousto-optics, optical nonlinearity, and electro-optics. However, to date, the realization of an integrated isolator with low insertion loss, high isolation ratio, broad bandwidth, and low power consumption on a monolithic material platform is still absent. Here we realize non-reciprocal traveling-wave EO-based isolator on thin-film LN, enabling maximum optical isolation of 48 dB and an on-chip insertion loss of 0.5 dB using a single-frequency microwave drive at 21-dBm RF power. The isolation ratio is verified to be larger than 37 dB across a tunable optical wavelength range from 1510 to 1630 nm. We verify that our hybrid DFB laser - LN isolator module successfully protects the single-mode operation and the linewidth of the DFB laser from reflection. Our result is a significant step towards a practical high-performance optical isolator on chip.

Photonic integrated circuit based optical phased arrays (PIC-OPAs) are emerging as promising programmable processors and spatial light modulators, combining the best of planar and free-space optics. Their implementation on silicon photonic platforms has been especially fruitful. Despite much progress in this field, demonstrating steerable two-dimensional (2D) OPAs that are scalable to a large number of array elements and operate with a single wavelength has proven a challenge. In addition, the phase shifters used in the array for programming the far-field beam are either power hungry or have a large footprint, preventing the implementation of large scale 2D arrays. Here, we demonstrate a two-dimensional silicon photonic phased array with high-speed (∼330 kHz) and ultralow power microresonator phase-shifters with a compact radius (∼3 µm) and 2π phase shift ability. Each phase-shifter consumes an average of ∼250 µW of static power for resonance alignment and ∼50 µW of power for far-field beamforming, a more than one order of magnitude improvement compared to prior OPA works based on waveguide-based thermo-optic phase shifters. Such PIC-OPA devices can enable a new generation of compact and scalable low power processors and sensors

Correlated quantum phenomena in one-dimensional (1D) systems that exhibit competing electronic and magnetic orders are of fundamental interest. Interaction effects in low-dimensional systems can lead to fundamental excitations which are completely different from the quasi-particles one would expect in a higher-dimensional counterpart, such as Tomonaga-Luttinger liquids and topological orders and defects. However, clean 1D electronic systems are difficult to realize experimentally, particularly magnetically ordered systems. Here, we show that the van der Waals layered magnetic semiconductor CrSBr behaves like a quasi-1D electronic material embedded in a magnetically ordered environment. The strong 1D electronic character is due to the unique combination of weak interlayer hybridization and anisotropy in effective mass and dielectric screening. The band structure and quasi-particle excitations are dominated by the Cr-S chains and a shallow 1D quantum confinement normal to these chains, manifesting in an anisotropic band with an effective electron mass ratio of meX/meY∼50. Strong quasi-particle interactions and 1D electronic character are indicated by Fano resonances from a van Hove singularity of similar strength as in metallic carbon nanotubes. The spectrally narrow excitons (1 meV) inherit the 1D character and show pronounced exciton-phonon coupling effects. Overall, CrSBr appears to be an experimentally clean candidate for the study of 1D correlated many-body physics in the presence of magnetic order.

Bridging the "terahertz (THz) gap" relies upon synthesizing arbitrary waveforms in the THz domain enabling applications that require both narrow band sources for sensing and few-cycle drives for classical and quantum objects. However, realization of custom-tailored waveforms needed for these applications is currently hindered due to limited flexibility for optical rectification of femtosecond pulses in bulk crystals. Here, we experimentally demonstrate that thin-film lithium niobate (TFLN) circuits provide a versatile solution for such waveform synthesis through combining the merits of complex integrated architectures, low-loss distribution of pump pulses on-chip, and an efficient optical rectification. Our distributed pulse phase-matching scheme grants shaping the temporal, spectral, phase, amplitude, and farfield characteristics of the emitted THz field through designer on-chip components. This strictly circumvents prior limitations caused by the phase-delay mismatch in conventional systems and relaxes the requirement for cumbersome spectral pre-engineering of the pumping light. We provide a toolbox of basic blocks that produce broadband emission up to 680 GHz with adaptable phase and coherence properties by using near-infrared pump pulse energies below 100 pJ.

Atomic-level defects in van der Waals (vdW) materials are essential building blocks for quantum technologies and quantum sensing applications. The layered magnetic semiconductor CrSBr is an outstanding candidate for exploring optically active defects owing to a direct gap in addition to a rich magnetic phase diagram including a recently hypothesized defect-induced magnetic order at low temperature. Here, we show optically active defects in CrSBr that are probes of the local magnetic environment. We observe spectrally narrow (1 meV) defect emission in CrSBr that is correlated with both the bulk magnetic order and an additional low temperature defect-induced magnetic order. We elucidate the origin of this magnetic order in the context of local and non-local exchange coupling effects. Our work establishes vdW magnets like CrSBr as an exceptional platform to optically study defects that are correlated with the magnetic lattice. We anticipate that controlled defect creation allows for tailor-made complex magnetic textures and phases with the unique ingredient of direct optical access.

Surface-acoustic-wave (SAW) devices have a wide range of applications in microwave signal processing. Microwave SAW components benefit from higher quality factors and much smaller crosstalk when compared to their electromagnetic counterparts. Efficient routing and modulation of SAWs are essential for building large-scale and versatile acoustic wave circuits. Here, we demonstrate integrated thermoacoustic modulators using two SAW platforms: bulk lithium niobate and thin-film lithium niobate on sapphire. In both approaches, the gigahertz-frequency SAWs are routed by integrated acoustic waveguides, while on-chip microheaters are used to locally change the temperature, and thus, control the phase of the SAW. Using this approach, we achieve phase changes of over 720° with the responsibility of 2.6°/mW for bulk lithium niobate and 0.52°/mW for lithium niobate on sapphire. Furthermore, we demonstrate amplitude modulation of SAWs using acoustic Mach-Zehnder interferometers. Our thermoacoustic modulators can enable reconfigurable acoustic signal processing for next-generation wireless communications and microwave systems.

Manipulating the frequency and bandwidth of nonclassical light is essential for implementing frequency-encoded/multiplexed quantum computation, communication, and networking protocols, and for bridging spectral mismatch among various quantum systems. However, quantum spectral control requires a strong nonlinearity mediated by light, microwave, or acoustics, which is challenging to realize with high efficiency, low noise, and on an integrated chip. Here, we demonstrate both frequency shifting and bandwidth compression of heralded single-photon pulses using an integrated thin-film lithium niobate (TFLN) phase modulator. We achieve record-high electro-optic frequency shearing of telecom single photons over terahertz range (±641 GHz or ±5.2 nm), enabling high visibility quantum interference between frequency-nondegenerate photon pairs. We further operate the modulator as a time lens and demonstrate over eighteen-fold (6.55 nm to 0.35 nm) bandwidth compression of single photons. Our results showcase the viability and promise of on-chip quantum spectral control for scalable photonic quantum information processing.

Integrated femtosecond pulse and frequency comb sources are critical components for a wide range of applications, including optical atomic clocks1, microwave photonics2, spectroscopy3, optical wave synthesis4, frequency conversion5, communications6, lidar7, optical computing8 and astronomy9. The leading approaches for on-chip pulse generation rely on mode-locking inside microresonators with either third-order nonlinearity10 or with semiconductor gain11,12. These approaches, however, are limited in noise performance, wavelength and repetition rate tunability 10,13. Alternatively, subpicosecond pulses can be synthesized without mode-locking, by modulating a continuous-wave single-frequency laser using electro-optic modulators1,14,15,16,17. Here we demonstrate a chip-scale femtosecond pulse source implemented on an integrated lithium niobate photonic platform18, using cascaded low-loss electro-optic amplitude and phase modulators and chirped Bragg grating, forming a time-lens system19. The device is driven by a continuous-wave distributed feedback laser chip and controlled by a single continuous-wave microwave source without the need for any stabilization or locking. We measure femtosecond pulse trains (520-femtosecond duration) with a 30-gigahertz repetition rate, flat-top optical spectra with a 10-decibel optical bandwidth of 12.6 nanometres, individual comb-line powers above 0.1 milliwatts, and pulse energies of 0.54 picojoules. Our results represent a tunable, robust and low-cost integrated pulsed light source with continuous-wave-to-pulse conversion efficiencies an order of magnitude higher than those achieved with previous integrated sources. Our pulse generator may find applications in fields such as ultrafast optical measurement19,20 or networks of distributed quantum computers21,22.

Long-distance quantum communication and networking require quantum memory nodes with efficient optical interfaces and long memory times. We report the realization of an integrated two-qubit network node based on silicon-vacancy centers (SiVs) in diamond nanophotonic cavities. Our qubit register consists of the SiV electron spin acting as a communication qubit and the strongly coupled silicon-29 nuclear spin acting as a memory qubit with a quantum memory time exceeding 2 seconds. By using a highly strained SiV, we realize electron-photon entangling gates at temperatures up to 1.5 kelvin and nucleus-photon entangling gates up to 4.3 kelvin. We also demonstrate efficient error detection in nuclear spin–photon gates by using the electron spin as a flag qubit, making this platform a promising candidate for scalable quantum repeaters.