Room-temperature photoresponse of Schottky photodiodes based on GaNxAs1− x synthesized by ion implantation and pulsed-laser melting
Publication information:
Wei Yi, Taeseok Kim, Ilan Shalish, Marko Loncar, Michael J. Aziz, and Venkatesh Narayanamurti. 2010. “Room-Temperature Photoresponse of Schottky Photodiodes Based on GaNxAs1− X Synthesized by Ion Implantation and Pulsed-Laser Melting”. Applied Physics Letters, 97, Pp. 151103